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PESD3V3L4UF - Low capacitance unidirectional quadruple ESD protection diode arrays

General Description

Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.

Table 1.

Key Features

  • I ESD protection of up to four lines I Low diode capacitance I Max. peak pulse power: PPP = 30 W I Low clamping voltage: VCL = 12 V I Ultra low leakage current: IRM = 5 nA I ESD protection up to 20 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 2.5 A 1.3.

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Other Datasheets by NXP Semiconductors

Part Number Description
PESD3V3L4UG (PESDxL4UG) Low capacitance quadruple ESD protection diode array
PESD3V3L4UW Low capacitance quadruple ESD protection array
PESD3V3L1BA Low capacitance bidirectional ESD protection diodes
PESD3V3L1UA Low Capacitance Unidirectional ESD Protection Diodes
PESD3V3L1UB Low Capacitance Unidirectional ESD Protection Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PESDxL4UF; PESDxL4UG; PESDxL4UW Low capacitance unidirectional quadruple ESD protection diode arrays Rev. 04 — 28 February 2008 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1.