PESD3V3V4UG Datasheet | NXP Semiconductors

description Very low capacitance unidirectional quadruple Electro Static Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1. Product overview Type number Package PESD3V3V4UF SOT886 PESD5V0V4UF SOT886 SOT353 PESD5V0V4UG SOT353 PESD3V3V4UW SOT665 PESD5V0V4UW SOT665 JEITA SC-88A SC-88A - JEDEC MO-252 MO-252 - Package configuration leadless ultra small leadless ultra small very small very small ultra small and flat lead ultra small and flat lead 1.2 Features I ESD protection of up to four lines I Very low diode capacitance I Max. peak pulse power: PPP = 16 W I Low clamping voltage: VCL = 11 V I Ultra low leakage current: IRM = 25 n A I ESD protection up to 12 k V I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 1.5 A 1.3 Applications I puters and peripherals I Audio and video equipment I Cellular handsets and accessories I munication systems I Portable electronics I Subscriber Identity Module (SIM) card protection .DNat Xa SPhe Sete4Um.coicmonductors PESDx V4UF/G/W Very low capacitance quadruple ESD protection diode arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW PESD5V0V4UF PESD5V0V4UG...