PESD5V0S4UF Datasheet | NXP Semiconductors

PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays Rev. 01 - 17 January 2008 Product data sheet 1. Product profile 1.1 General description Unidirectional quadruple Electro Static Discharge (ESD) protection diode arrays in a small SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four signal lines from the damage caused by ESD and other transients. 1.2 Features I ESD protection of up to four lines I Max. peak pulse power: PPP = 110 W I Low clamping voltage: VCL = 11 V I Ultra low leakage current: IRM = 4 n A I ESD protection up to 30 k V I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 10 A I AEC-Q101 qualified 1.3 Applications I puters and peripherals I Audio and video equipment I Cellular handsets and accessories I munication systems I Portable electronics 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Per diode VRWM reverse standoff voltage PESD3V3S4UF Cd diode capacitance PESD3V3S4UF f = 1 MHz; VR = 0 V Min Typ Max Unit - - 3.3 V - - 5.0 V - 110 300 p F - 85 220 p F NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF Unidirectional quadruple ESD protection diode arrays 2. Pinning...