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PESD5V0S4UF Datasheet

Unidirectional quadruple ESD protection diode arrays

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PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Rev. 01 — 17 January 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four
signal lines from the damage caused by ESD and other transients.
1.2 Features
I ESD protection of up to four lines
I Max. peak pulse power: PPP = 110 W
I Low clamping voltage: VCL = 11 V
I Ultra low leakage current: IRM = 4 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 10 A
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3S4UF
PESD5V0S4UF
Cd diode capacitance
PESD3V3S4UF
f = 1 MHz; VR = 0 V
PESD5V0S4UF
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 110 300 pF
- 85 220 pF


NXP Semiconductors Electronic Components Datasheet

PESD5V0S4UF Datasheet

Unidirectional quadruple ESD protection diode arrays

No Preview Available !

NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
Simplified outline
123
65
bottom view
4
Symbol
16
25
34
006aaa156
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PESD3V3S4UF XSON6
PESD5V0S4UF
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm
Version
SOT886
4. Marking
Table 4. Marking codes
Type number
PESD3V3S4UF
PESD5V0S4UF
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
A3
A4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
PPP peak pulse power
tp = 8/20 µs
[1][2] -
IPP
peak pulse current
tp = 8/20 µs
[1][2] -
Max Unit
110 W
10 A
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Rev. 01 — 17 January 2008
© NXP B.V. 2008. All rights reserved.
2 of 13


Part Number PESD5V0S4UF
Description Unidirectional quadruple ESD protection diode arrays
Maker NXP
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