PHD9NQ20T transistor equivalent, n-channel trenchmos transistor.
* Higher operating power due to low thermal resistance
* Low conduction losses due to low on-state resistance
* Suitable for high frequency applications due .
only.
1.2 Features and benefits
* Higher operating power due to low thermal resistance
* Low conduction losses .
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feat.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 153.10KB)