PHF14NQ20T datasheet, transistor equivalent, NXP

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Features and benefits

* ’Trench’ technology
* Low on-state resistance
* Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRI.

Application

The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package. PINNING PIN 1 2 3 case gate drain source.

Description

N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications..

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