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PHK31NQ03LT - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • I Optimized for use in DC-to-DC converters I Logic level compatible I Very low switching and conduction losses 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHK31NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 18 December 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Optimized for use in DC-to-DC converters I Logic level compatible I Very low switching and conduction losses 1.3 Applications I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I Notebook computers 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 4.4 mΩ I ID ≤ 30.4 A I QGD = 7.7 nC (typ) 2. Pinning information Table 1. Pin 1, 2, 3 4 5, 6, 7, 8 Pinning Description source (S) gate (G) drain (D) 8 5 D Simplified outline Symbol G mbb076 1 4 S SOT96-1 (SO8) Free Datasheet http://www.datasheet4u.