Datasheet4U Logo Datasheet4U.com

PHK18NQ03LT - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHK12NQ03LT N-channel TrenchMOS-TM logic level FET NXP Semiconductors
PHK12NQ10T TrenchMOS standard level FET NXP Semiconductors
PHK13N03LT TrenchMOS logic level FET NXP Semiconductors
PHKD13N03LT Dual N-channel TrenchMOS logic level FET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PHK04P02T P-channel vertical D-MOS logic level FET
PHK24NQ04LT TrenchMOS logic level FET
PHK28NQ03LT TrenchMOS logic level FET
PHK31NQ03LT N-channel TrenchMOS logic level FET
PHK4NQ10T N-channel TrenchMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SO 8 PHK18NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 17 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Notebook computers „ Switched-mode power supplies „ Voltage regulators 1.4 Quick reference data Table 1.