PHK18NQ03LT Datasheet | NXP Semiconductors

SO 8 N-channel TrenchMOS logic level FET Rev. 03 - 17 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters - Notebook puters - Switched-mode power supplies - Voltage regulators 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick...