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PHK31NQ03LT
N-channel TrenchMOS logic level FET
Rev. 01 — 18 December 2006 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Optimized for use in DC-to-DC converters I Logic level compatible I Very low switching and conduction losses
1.3 Applications
I DC-to-DC converters I Voltage regulators I Switched-mode power supplies I Notebook computers
1.4 Quick reference data
I VDS ≤ 30 V I RDSon ≤ 4.4 mΩ I ID ≤ 30.4 A I QGD = 7.7 nC (typ)
2. Pinning information
Table 1. Pin 1, 2, 3 4 5, 6, 7, 8 Pinning Description source (S) gate (G) drain (D)
8 5
D
Simplified outline
Symbol
G
mbb076
1
4
S
SOT96-1 (SO8)
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PHK31NQ03LT Datasheet
