PHP125N06LT Datasheet - NXP

TrenchMOS transistor Logic level FET

PHP125N06LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHP125N06LT, PHB125N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 75 A g s RD

PHP125N06LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP125N06LT is supplied in the SOT78 (TO2.

PHP125N06LT Datasheet (71.76 KB)