PHPT60606NY transistor equivalent, npn high power bipolar transistor.
* High thermal power dissipation capability
* High temperature applications up to 175 °C
* Reduced Printed Circuit Board (PCB) requirements comparing to trans.
up to 175 °C
* Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
* High energy e.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60606PY
2. Features and benefits
* High thermal power dissipation capability
* High temperature applications up t.
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