PHT6NQ10T transistor equivalent, n-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A
g
RDS(O.
* Motor and relay drivers
* d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223 surface mounting pac.
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:
* Motor and relay drivers
* d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223 surface mounting package.
PINNING
PI.
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