PHX3055E transistor equivalent, n-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Isolated mounting tab
SYMBOL
d
QUICK REFERENCE DATA VDSS = 55 V ID = 9 A
g
RDS(ON) ≤.
* d.c. to d.c. converters
* switched mode power supplies The PHX3055E is supplied in the SOT186A (isolated TO220.
N-channel enhancement mode, field-effect power transistor in a plastic envelope with an electrically isolated mounting tab. The device uses ’trench’ technology to achieve low on-state resistance. Applications:
* d.c. to d.c. converters
* switc.
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