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PLB16012U - NPN microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.

Key Features

  • Input matching cell allows an easier design of circuits.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Interdigitated structure provides high emitter efficiency.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.

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Full PDF Text Transcription for PLB16012U (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips ...

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uct specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation

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