PMBFJ177
Description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 1.2 Quick reference data.
Key Features
- 2 Quick reference data Table
- Quick reference data Symbol Parameter Conditions VDS VGSo -IG Ptot drain-source voltage gate-source voltage gate current total power dissipation up to Tamb = 25 ° C -IDSS drain current -VDS = 15 V; VGS = 0 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 RDS on drain-source ONresistance -VDS = 0.1 V; VGS = 0 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 Min Typ Max Unit 30 - 30 V - - 30 V - - 50 mA - - 300 mW 20 721.5 - 135 mA 70 mA 35 mA 20 mA 85 Ω 125 Ω 250 Ω 300 Ω NXP Semiconductors
