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PMBFJ310 - N-channel transistor

Download the PMBFJ310 datasheet PDF. This datasheet also covers the PMBFJ308 variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.

This device is sensitive to ElectroStatic Discharge (ESD).

Therefore care should be taken during transport and handling.

Key Features

  • Low noise.
  • Interchangeability of drain and source connections.
  • High gain. 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PMBFJ308-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
PMBFJ308 N-channel transistor
PMBFJ309 N-channel transistor
PMBFJ108 N-channel FET
PMBFJ109 N-channel FET
PMBFJ110 N-channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SOT23 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Low noise  Interchangeability of drain and source connections  High gain. 1.3 Applications  AM input stage in car radios  VHF amplifiers  Oscillators and mixers. 1.4 Quick reference data Table 1.