PMCM4401VNE Key Features
- Low threshold voltage
- Ultra small package: 0.78 × 0.78 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Part: PMCM4401VNE
- Manufacturer: NXP Semiconductors (official site)
- Size: 315.85 KB
Other PMCM4401VNE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PMCM4401VNE | N-channel MOSFET |
|
Nexperia |
PMCM4401VPE | P-channel MOSFET |
|
Nexperia |
PMCM4401UNE | N-channel Trench MOSFET |
|
Nexperia |
PMCM4401UPE | P-channel MOSFET |
PMCM4401VNE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.