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PMDXB550UNE Key Features

  • Low threshold voltage
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Exposed drain pad for excellent thermal conduction

Other PMDXB550UNE Datasheets

Manufacturer Part Number Description
nexperia Logo Nexperia PMDXB550UNE dual N-channel MOSFET

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PMDXB550UNE Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.