PMDXB550UNE Datasheet
PMDXB550UNE Datasheet (NXP Semiconductors)
NXP Semiconductors
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features a.
and benefits
* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Exposed drain pad for excellent thermal conduction
3. Applications
* Relay driver
* High-speed line .
PMDXB550UNE Datasheet (Nexperia)
Nexperia
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features a.
and benefits
* Low threshold voltage
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Trench MOSFET technology
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* Exposed drain pad for excellent thermal conduction
3. Applications
* Relay driver
* High-speed line .