PMDXB550UNE - dual N-channel Trench MOSFET

Product Overview

NXP

PMDXB550UNE dual N-channel Trench MOSFET by NXP - Datasheet Preview — Datasheet preview – PMDXB550UNE

Datasheet Details

Part number	PMDXB550UNE
Manufacturer	NXP
File Size	234.67 KB
Description	dual N-channel Trench MOSFET
Datasheet	PMDXB550UNE Datasheet
Additional preview pages of the PMDXB550UNE datasheet.

Product details

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Low threshold voltage.
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM.
Exposed drain pad for excellent thermal conduction 3.

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Published: Feb 2, 2016 |