PMFPB8040XP Key Features
- 1.8 V RDSon rated for low-voltage gate drive
- Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Integrated ultra low VF MEGA Schottky diode
- Part: PMFPB8040XP
- Manufacturer: NXP Semiconductors (official site)
- Size: 278.28 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| PMF280UN | N-channel UTrenchMOS ultra low level FET |
| PMF290XN | N-channel mTrenchMOS extremely low level FET |
| PMF370XN | N-channel mTrenchMOS extremely low level FET |
| PMF3800SN | N-channel TrenchMOS standard level FET |
| PMF400UN | N-channel mTrenchMOS ultra low level FET |
PMFPB8040XP Description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode bined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
PMFPB8040XP Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables