Click to expand full text
PMR370XN
N-channel µTrenchMOS™ extremely low level FET
M3D173
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance
s Footprint 63% smaller than SOT23 s Low threshold voltage.
1.3 Applications
s Driver circuits
s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 0.53 W
s ID ≤ 0.84 A s RDSon ≤ 440 mΩ.
2. Pinning information
Table 1: Pin 1 2 3
Pinning - SOT416 (SC-75), simplified outline and symbol
Description
Simplified outline
gate (g)
source (s)
3
drain (d)
1
2
Top view
MBK090
SOT416 (SC-75)
3.
PMR370XN Datasheet
