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PMV213SN - uTrenchMOS standard level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: PMV213SN in SOT23.

Features

  • s Low on-state resistance in a small surface mount package. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PMV213SN µTrenchMOS™ standard level FET Rev. 02 — 19 February 2003 M3D088 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23. 1.2 Features s Low on-state resistance in a small surface mount package. 1.3 Applications s DC-to-DC primary side switching. 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 2 W s ID ≤ 1.9 A s RDSon ≤ 250 mΩ 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23 simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBB076 MSB003 Simplified outline 3 Symbol d s SOT23 www.DataSheet4U.com www.DataSheet4U.
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