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PMV213SN - N-channel FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology.

2.

Key Features

  • Low on-state resistance in a small surface mount package 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV213SN N-channel TrenchMOS standard level FET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features and benefits • Low on-state resistance in a small surface mount package 3. Applications • DC-to-DC primary side switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current RDSon drain-source on-state resistance Ptot total power dissipation Conditions 25 °C < Tj < 150 °C Tj = 25 °C VGS = 10 V; Tsp = 25 °C VGS = 10 V; ID = 0.5 A; Tj = 25 °C Tsp = 25 °C Min Typ Max Unit - - 100 V -30 - 30 V - - 1.