PMV213SN Datasheet and Specifications PDF

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features and benefits • Low on-state resistance in a small surface mount package 3. Application.

and benefits
* Low on-state resistance in a small surface mount package 3. Applications
* DC-to-DC primary side switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current RDSon drain-source on-state .

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23. 1.2 Features s Low on-state resistance in a small surface .

s Low on-state resistance in a small surface mount package. 1.3 Applications s DC-to-DC primary side switching. 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 2 W s ID ≤ 1.9 A s RDSon ≤ 250 mΩ 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23 simplified outline and symbol Description gate.