PMXB360ENEA
PMXB360ENEA is N-channel Trench MOSFET manufactured by NXP Semiconductors.
DF N1 01
16 September 2013
0D -3
80 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
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- Logic-level patible Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified
3. Applications
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Relay driver Power management in automotive and industrial applications LED driver DC-to-DC...
