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PMXB75UPE Datasheet P-channel Trench MOSFET

Manufacturer: NXP Semiconductors

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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Overview

DFN1010D-3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1.

Key Features

  • Trench MOSFET technology.
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
  • Exposed drain pad for excellent thermal conduction.
  • ElectroStatic Discharge (ESD) protection 1.5 kV HBM.
  • Drain-source on-state resistance RDSon = 69 mΩ.
  • Very low gate-source threshold voltage for portable.