Datasheet4U Logo Datasheet4U.com

PMZ600UNE - N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZ600UNE N-channel MOSFET nexperia
PMZ600UNEL N-channel MOSFET nexperia
PMZ1000UN N-channel TrenchMOS standard level FET NXP Semiconductors
PMZ1200UPE P-channel MOSFET nexperia
PMZ130UNE N-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PMZ1200UPE P-channel Trench MOSFET
PMZ130UNE N-channel Trench MOSFET
PMZ200UNE N-channel Trench MOSFET
PMZ290UNE N-channel Trench MOSFET
PMZ290UNE2 N-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZ600UNE 26 June 2014 SO T8 83 20 V, N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 0.