Datasheet Details
| Part number | PMZB1200UPE |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 210.50 KB |
| Description | P-channel Trench MOSFET |
| Datasheet |
 PMZB1200UPE Datasheet
|
|
|
General Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Key Features
- Trench MOSFET technology.
- Low threshold voltage.
- Very fast switching.
- ElectroStatic Discharge (ESD) protection > 2 kV HBM.
- Ultra thin package profile of 0.37 mm height 3.
