Datasheet Details
| Part number | PMZB200UNE |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 229.04 KB |
| Description | N-channel Trench MOSFET |
| Datasheet |
 PMZB200UNE Datasheet
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General Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Key Features
- Very fast switching.
- Low threshold voltage.
- Trench MOSFET technology.
- ElectroStatic Discharge (ESD) protection: 2 kV HBM.
- Ultra thin package profile of 0.37 mm 3.
