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PMZB290UNE2 Datasheet N-channel Trench MOSFET

Manufacturer: NXP Semiconductors

Overview: SOT883B PMZB290UNE2 20 V, N-channel Trench MOSFET 24 March 2015 Product data sheet 1.

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Ultra thin package profile of 0.37 mm 3.

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