Datasheet Details
| Part number | PMZB600UNE |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 227.50 KB |
| Description | N-channel Trench MOSFET |
| Datasheet |
 PMZB600UNE Datasheet
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General Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Key Features
- Trench MOSFET technology.
- Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm.
- ElectroStatic Discharge (ESD) protection > 1 kV HBM.
- Drain-source on-state resistance RDSon = 470 mΩ 3.
