PSMN4R0-60YS Key Features
- Advanced TrenchMOS provides low RDSon and low gate charge
- High efficiency in switching power converters
- Improved mechanical and thermal characteristics
- LFPAK provides maximum power density in a Power SO8 package
- Part: PSMN4R0-60YS
- Manufacturer: NXP Semiconductors (official site)
- Size: 261.75 KB
Other PSMN4R0-60YS Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nexperia |
PSMN4R0-60YS | N-channel MOSFET |
PSMN4R0-60YS Description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of tele, industrial and domestic equipment.
PSMN4R0-60YS Applications
- DC-to-DC converters
- Lithium-ion battery protection