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BLF573S Datasheet Hf / Vhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 — 8 July 2010 Product data sheet 1. Product profile 1.

General Description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Table 1.

Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Key Features

  • Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.2 dB ‹ Efficiency = 70 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF and VHF band).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.

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Similar Datasheet

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