BLF578 Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF578 Power LDMOS transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product proﬁle 1.

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Datasheet Details

Part number	BLF578
Manufacturer	NXP Semiconductors
File Size	154.97 KB
Description	Power LDMOS transistor
Download	BLF578 Download (PDF)

General Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Table 1.

Production test information f (MHz) pulsed RF 225 VDS (V) 50 PL (W) 1200 Gp (dB) 24 ηD (%) 70 Mode of operation CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Key Features

I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efﬁciency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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