BLF6G10LS-200 Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product proﬁle 1.

Datasheet Details

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27 % N ACPR =.
41 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Haza.

Brand Logo	Part Number	Description	Manufacturer
	BLF6G10LS-200RN	Power LDMOS transistor	Ampleon