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BLF6G10LS-200 Datasheet

Power LDMOS transistor

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BLF6G10LS-200
Power LDMOS transistor
Rev. 01 — 18 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 27
ACPR
(dBc)
41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = 41 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)


NXP Semiconductors Electronic Components Datasheet

BLF6G10LS-200 Datasheet

Power LDMOS transistor

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www.DNatXaSPheSete4Um.coicmonductors
BLF6G10LS-200
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange
3. Ordering information
Simplified outline Symbol
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLF6G10LS-200 -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- 49 A
65 +150 °C
- 225 °C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
Conditions
Tcase = 80 °C; PL = 40 W
Typ Unit
0.34 K/W
BLF6G10LS-200_1
Preliminary data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
2 of 11


Part Number BLF6G10LS-200
Description Power LDMOS transistor
Maker NXP Semiconductors
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