| Part number | BLF6G10LS-200 |
|---|---|
| Datasheet | BLF6G10LS-200_NXPSemiconductors.pdf |
| File Size | 137.34 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS transistor |
|
|
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −41[1] Test signal:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLF6G10LS-200RN | Power LDMOS transistor | Ampleon |
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