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BLF6G10LS-200 Datasheet, NXP Semiconductors

BLF6G10LS-200 transistor equivalent, power ldmos transistor.

BLF6G10LS-200 Avg. rating / M : 1.0 rating-17

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BLF6G10LS-200 Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain =.

Application

at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class.

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f .

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BLF6G10LS-200 Page 1 BLF6G10LS-200 Page 2 BLF6G10LS-200 Page 3

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