BLF6G10LS-200R - Power LDMOS transistor

Product Overview

NXP Semiconductors

Datasheet Details

Part number	BLF6G10LS-200R
Manufacturer	NXP Semiconductors
File Size	135.33 KB
Description	Power LDMOS transistor
Datasheet	BLF6G10LS-200R Datasheet
Additional preview pages of the BLF6G10LS-200R datasheet.

Product details

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 40[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is sensitiv

Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27.5 % N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of haz.

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Published: Jul 29, 2009 |