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BLF6G10LS-200R - Power LDMOS transistor

NXP Semiconductors

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Datasheet Details

Part number: BLF6G10LS-200R
Manufacturer: NXP ↗ Semiconductors
File Size: 135.33 KB
Datasheet: BLF6G10LS-200R_NXPSemiconductors.pdf
Description: Power LDMOS transistor

BLF6G10LS-200R Product details

Description

200 W.

Features

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27.5 % N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of haz.

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