BLF7G22LS-130 Key Features
- Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (200
- Part: BLF7G22LS-130
- Manufacturer: NXP Semiconductors (official site)
- Size: 193.78 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BLF571 | HF / VHF power LDMOS transistor |
| BLF573 | HF / VHF power LDMOS transistor |
| BLF573S | HF / VHF power LDMOS transistor |
| BLF574 | HF / VHF power LDMOS transistor |
| BLF578 | Power LDMOS transistor |
BLF7G22LS-130 Description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.