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BLF573 - HF / VHF power LDMOS transistor

Download the BLF573 datasheet PDF. This datasheet also covers the BLF573S variant, as both devices belong to the same hf / vhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Table 1.

Key Features

  • Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.2 dB ‹ Efficiency = 70 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF and VHF band).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF573S_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF573 Power LDMOS transistor Ampleon
BLF573S Power LDMOS transistor Ampleon
BLF571 Power LDMOS transistor Ampleon
BLF574 Power LDMOS transistor Ampleon
BLF574XR Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF573S HF / VHF power LDMOS transistor
BLF571 HF / VHF power LDMOS transistor
BLF574 HF / VHF power LDMOS transistor
BLF578 Power LDMOS transistor
BLF645 Broadband power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ‹ Average output power = 300 W ‹ Power gain = 27.