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BLF884PS - UHF power LDMOS transistor

Download the BLF884PS datasheet PDF. This datasheet also covers the BLF884P variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BLF884P-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Overview

BLF884P; BLF884PS UHF power LDMOS transistor Rev.

2 — 16 December 2011 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (470 MHz to 860 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.