BLL1214-250R Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting base eliminates DC isolators, reducing mon mode inductance
- Part: BLL1214-250R
- Manufacturer: NXP Semiconductors (official site)
- Size: 163.24 KB
Other BLL1214-250R Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BLL1214-250 | L-band radar LDMOS transistor |
BLL1214-250R Description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The mon source is connected to the flange. Test information Typical RF performance at Th = 25 °C;.