BLL1214-250R Datasheet | NXP Semiconductors

LDMOS L-band radar power transistor Rev. 01 - 4 February 2010 .. Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The mon source is connected to the flange. Table 1. Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a mon source class-AB test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 36 IDq (mA) 150 PL (W) Gp (dB) ηD (%) 47 Pdroop(pulse) (dB) 0.2 tr (ns) 15 tf (ns) 5 250 13 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care...