BLL1214-250 datasheet by NXP Semiconductors.
| Part number | BLL1214-250 |
|---|---|
| Datasheet | BLL1214-250_PhilipsSemiconductors.pdf |
| File Size | 79.30 KB |
| Manufacturer | NXP Semiconductors |
| Description | L-band radar LDMOS transistor |
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Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The mon source is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
View BLL1214-250R datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BLL1214-250R | LDMOS L-band radar power transistor | NXP Semiconductors |
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLL6H0514-25 | LDMOS Driver Transistor |
| BLL6H1214L-250 | LDMOS L-band Radar Power Transistor |
| BLL6H1214LS-250 | LDMOS L-band Radar Power Transistor |
| BLL6H1214P2S-250 | LDMOS L-band radar power module |
| BLL8H0514-25 | Power LDMOS transistor |
| BLL8H0514L-130 | LDMOS driver transistor |
| BLL8H0514LS-130 | LDMOS driver transistor |
| BLL8H1214L-250 | LDMOS L-band radar power transistor |
| BLL8H1214L-500 | LDMOS L-band radar power transistor |
| BLL8H1214LS-250 | LDMOS L-band radar power transistor |
