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BLL1214-250 Datasheet L-band Radar Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar.

General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

The mon source is connected to the flange.

Top view handbook, halfpage BLL1214-250 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 2 3 MBK394 Fig.1 Simplified outline.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.

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