BLL1214-250
BLL1214-250 is L-band radar LDMOS transistor manufactured by NXP Semiconductors.
DISCRETE SEMICONDUCTORS
DATA SHEET book, halfpage
M3D379
BLL1214-250 L-band radar LDMOS transistor
Product specification Supersedes data of 2002 Aug 06 2003 Aug 29
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting base eliminates DC isolators, reducing mon mode inductance. APPLICATIONS
- L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The mon source is connected to the flange.
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