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BLL1214-250 - L-band radar LDMOS transistor

General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

The common source is connected to the flange.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.