BLL1214-250
Overview
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS
- L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Top view handbook, halfpage
