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BLL1214-250 - L-band radar LDMOS transistor

Datasheet Summary

Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

The common source is connected to the flange.

Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.

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Datasheet preview – BLL1214-250

Datasheet Details

Part number BLL1214-250
Manufacturer NXP
File Size 79.30 KB
Description L-band radar LDMOS transistor
Datasheet download datasheet BLL1214-250 Datasheet
Additional preview pages of the BLL1214-250 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.
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