BLL1214-250R datasheet by NXP Semiconductors.
| Part number | BLL1214-250R |
|---|---|
| Datasheet | BLL1214-250R_NXPSemiconductors.pdf |
| File Size | 163.24 KB |
| Manufacturer | NXP Semiconductors |
| Description | LDMOS L-band radar power transistor |
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Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The mon source is connected to the flange. Test information Typical RF performance at Th = 25 °C;.
View BLL1214-250 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLL1214-250 | L-band radar LDMOS transistor | NXP |
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