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BLL1214-250R - LDMOS L-band radar power transistor

Datasheet Summary

Description

Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

The common source is connected to the flange.

Table 1.

Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %: ‹ Output power = 250 W ‹ Power gain = 13 dB ‹ Efficiency = 47 %.
  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3.

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Datasheet Details

Part number BLL1214-250R
Manufacturer NXP Semiconductors
File Size 163.24 KB
Description LDMOS L-band radar power transistor
Datasheet download datasheet BLL1214-250R Datasheet
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BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Table 1. Test information Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 36 IDq (mA) 150 PL (W) Gp (dB) ηD (%) 47 Pdroop(pulse) (dB) 0.2 tr (ns) 15 tf (ns) 5 250 13 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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