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BLS6G2731-6G Datasheet - NXP Semiconductors

LDMOS S-Band radar power transistor

BLS6G2731-6G Features

* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efficiency = 33 % I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent rugged

BLS6G2731-6G General Description

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W.

BLS6G2731-6G Datasheet (98.83 KB)

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Datasheet Details

Part number:

BLS6G2731-6G

Manufacturer:

NXP ↗ Semiconductors

File Size:

98.83 KB

Description:

Ldmos s-band radar power transistor.
BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 19 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 Ge.

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BLS6G2731-6G LDMOS S-Band radar power transistor NXP Semiconductors

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