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BLS6G2731-6G - LDMOS S-Band radar power transistor

Description

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:.
  • Output power = 6 W.
  • Power gain = 15 dB.
  • Efficiency = 3.

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Datasheet Details

Part number BLS6G2731-6G
Manufacturer Ampleon
File Size 341.04 KB
Description LDMOS S-Band radar power transistor
Datasheet download datasheet BLS6G2731-6G Datasheet
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BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%) tr (ns) tf (ns) pulsed RF 2.7 to 3.1 32 6 15 33 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. You must use a ground strap or touch the PC case or other grounded source before unpacking or handling the hardware. 1.
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