BLS6G2731-6G datasheet by Ampleon.
| Part number | BLS6G2731-6G |
|---|---|
| Datasheet | BLS6G2731-6G-Ampleon.pdf |
| File Size | 341.04 KB |
| Manufacturer | Ampleon |
| Description | LDMOS S-Band radar power transistor |
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6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
View BLS6G2731-6G datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLS6G2731-6G | LDMOS S-Band radar power transistor | NXP Semiconductors |
| Part Number | Description |
|---|---|
| BLS6G2731-120 | LDMOS S-band radar power transistor |
| BLS6G2731S-120 | LDMOS S-band radar power transistor |
| BLS6G2735L-30 | S-band LDMOS transistor |
| BLS6G2735LS-30 | S-band LDMOS transistor |
| BLS6G2933S-130 | LDMOS S-band radar power transistor |
| BLS6G3135-120 | LDMOS S-Band radar power transistor |
| BLS6G3135-20 | LDMOS S-Band radar power transistor |
| BLS6G3135S-120 | LDMOS S-Band radar power transistor |
| BLS6G3135S-20 | LDMOS S-Band radar power transistor |
| BLS7G2325L-105 | Power LDMOS transistor |
