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BLS6G2933S-130 - LDMOS S-band radar power transistor

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General Description

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Overview

www.DataSheet4U.com BLS6G2933S-130 LDMOS S-band radar power transistor Rev.

01 — 11 December 2008 Objective data sheet 1.

Product profile 1.

Key Features

  • I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.9 GHz to 3.3 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Ampleon Logo BLS6G2933S-130 LDMOS S-band radar power transistor Ampleon

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