BLS6G2933S-130 - LDMOS S-band radar power transistor

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NXP Semiconductors

Part number	BLS6G2933S-130
Manufacturer	NXP Semiconductors
File Size	116.11 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS6G2933S-130 Datasheet
Additional preview pages of the BLS6G2933S-130 datasheet.

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efﬁciency = 47 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2.9 GHz to 3.3 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.

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Published: Jul 29, 2009 |