900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BLS6G2933S-130 Datasheet

LDMOS S-band radar power transistor

No Preview Available !

www.DataSheet4U.com
BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 01 — 11 December 2008
Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.9 to 3.3 32 130
12.5 47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %:
N Output power = 130 W
N Power gain = 12.5 dB
N Efficiency = 47 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.9 GHz to 3.3 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)


NXP Semiconductors Electronic Components Datasheet

BLS6G2933S-130 Datasheet

LDMOS S-band radar power transistor

No Preview Available !

www.DNatXaSPheSete4Um.coicmonductors
BLS6G2933S-130
LDMOS S-band radar power transistor
1.3 Applications
I S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLS6G2933S-130 -
ceramic earless flanged cavity package; 2 leads
Version
SOT922-1
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Min
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
-
0.5
-
65
-
Max
60
+13
33
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Zth(j-mb)
Thermal characteristics
Parameter
transient thermal impedance from
junction to mounting base
Conditions
Tcase = 85 °C; PL = 130 W
tp = 100 µs; δ = 10 %
tp = 200 µs; δ = 10 %
tp = 300 µs; δ = 10 %
tp = 100 µs; δ = 20 %
Typ Unit
0.23 K/W
0.28 K/W
0.32 K/W
0.33 K/W
BLS6G2933S-130_1
Objective data sheet
Rev. 01 — 11 December 2008
© NXP B.V. 2008. All rights reserved.
2 of 11


Part Number BLS6G2933S-130
Description LDMOS S-band radar power transistor
Maker NXP Semiconductors
PDF Download

BLS6G2933S-130 Datasheet PDF





Similar Datasheet

1 BLS6G2933S-130 LDMOS S-band radar power transistor
Ampleon
2 BLS6G2933S-130 LDMOS S-band radar power transistor
NXP Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy