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BLS6G2933S-130 Datasheet - NXP Semiconductors

LDMOS S-band radar power transistor

BLS6G2933S-130 Features

* I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse f

BLS6G2933S-130 General Description

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL.

BLS6G2933S-130 Datasheet (116.11 KB)

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Datasheet Details

Part number:

BLS6G2933S-130

Manufacturer:

NXP ↗ Semiconductors

File Size:

116.11 KB

Description:

Ldmos s-band radar power transistor.
www.DataSheet4U.com BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 11 December 2008 Objective data sheet 1. Product profile 1.1.

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BLS6G2933S-130 LDMOS S-band radar power transistor NXP Semiconductors

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