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BLS6G2933S-130 - LDMOS S-band radar power transistor

Description

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:.
  • Output power = 130 W.
  • Power gain = 12.5 dB.
  • Efficiency = 47 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse forma.

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Datasheet Details

Part number BLS6G2933S-130
Manufacturer Ampleon
File Size 308.01 KB
Description LDMOS S-band radar power transistor
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BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp D (dB) (%) tr (ns) tf (ns) pulsed RF 2.9 to 3.3 32 130 12.5 47 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 2.9 GHz to 3.
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