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BLS6G2933S-130

Manufacturer: NXP Semiconductors

BLS6G2933S-130 datasheet by NXP Semiconductors.

BLS6G2933S-130 datasheet preview

BLS6G2933S-130 Datasheet Details

Part number BLS6G2933S-130
Datasheet BLS6G2933S-130_NXPSemiconductors.pdf
File Size 116.11 KB
Manufacturer NXP Semiconductors
Description LDMOS S-band radar power transistor
BLS6G2933S-130 page 2 BLS6G2933S-130 page 3

BLS6G2933S-130 Overview

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.

BLS6G2933S-130 from other manufacturers

View BLS6G2933S-130 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLS6G2933S-130 LDMOS S-band radar power transistor Ampleon
NXP Semiconductors logo - Manufacturer

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