BLS6G2933S-130 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: .. BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	BLS6G2933S-130
Manufacturer	NXP Semiconductors
File Size	116.11 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS6G2933S-130_NXPSemiconductors.pdf

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efﬁciency = 47 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2.9 GHz to 3.3 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.

Brand Logo	Part Number	Description	Other Manufacturers
	BLS6G2933S-130	LDMOS S-band radar power transistor	Ampleon

Part Number	Description
BLS6G2731-6G	LDMOS S-Band radar power transistor
BLS6G3135-120	LDMOS S-Band radar power transistor
BLS6G3135-20	LDMOS S-Band radar power transistor
BLS6G3135S-120	LDMOS S-Band radar power transistor
BLS6G3135S-20	LDMOS S-Band radar power transistor