BLS6G2933S-130 Overview
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
BLS6G2933S-130 datasheet by NXP Semiconductors.
| Part number | BLS6G2933S-130 |
|---|---|
| Datasheet | BLS6G2933S-130_NXPSemiconductors.pdf |
| File Size | 116.11 KB |
| Manufacturer | NXP Semiconductors |
| Description | LDMOS S-band radar power transistor |
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130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
View BLS6G2933S-130 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BLS6G2933S-130 | LDMOS S-band radar power transistor | Ampleon |
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