| Part Number | BLS6G2933S-130 Datasheet |
|---|---|
| Manufacturer | Ampleon |
| Overview |
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA.
and benefits
* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 s with of 10 %: * Output power = 130 W * Power gain = 12.5 dB * Efficiency = 47 % * Easy power control * Integrated ESD protection * High flexibility with res. |
BLS6G2933S-130 Datasheet and Specifications PDF
The BLS6G2933S-130 is a LDMOS S-band radar power transistor.
| Part Number | BLS6G2933S-130 Datasheet |
|---|---|
| Description | LDMOS S-band radar power transistor |
| Manufacturer | NXP Semiconductors |
| Overview | 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA;. I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N Power gain = 12.5 dB N Efficiency = 47 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse f. |