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BLS6G3135S-20, BLS6G3135-20 Datasheet - NXP Semiconductors

BLS6G3135S-20 LDMOS S-Band radar power transistor

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) .

BLS6G3135S-20 Features

* I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal sta

BLS6G3135-20_NXPSemiconductors.pdf (263.57 KB)

This datasheet PDF includes multiple part numbers: BLS6G3135S-20, BLS6G3135-20. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLS6G3135S-20, BLS6G3135-20

Manufacturer:

NXP ↗ Semiconductors

File Size:

263.57 KB

Description:

Ldmos s-band radar power transistor.

Note:

This datasheet PDF includes multiple part numbers: BLS6G3135S-20, BLS6G3135-20.
Please refer to the document for exact specifications by model.

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BLS6G3135S-20 BLS6G3135-20 LDMOS S-Band radar power transistor NXP Semiconductors

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