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BUK223-50Y Datasheet PowerMOS transistor TOPFET high side switch

Manufacturer: NXP Semiconductors

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General Description

Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package.

BUK223-50Y QUICK REFERENCE DATA SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C MIN.

12 MAX.

Overview

Philips Semiconductors Product specification PowerMOS transistor TOPFET high side.

Key Features

  • Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection.

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